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AS29LV400 -    3V 512K x 8/256K × 16 CMOS Flash EEPROM

AS29LV400_8914917.PDF Datasheet


 Full text search :    3V 512K x 8/256K × 16 CMOS Flash EEPROM


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Toshiba Corporation
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Cypress Semiconductor Corp.
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TC554001FTL-85L TC554001FL-10L TC554001FTL-10L 512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
Toshiba Corporation
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CY14B104L-BA15XCT CY14B104L-BA15XI 4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
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TC554001AFT-85V TC554001AFT-70V TC554001ATR-85V TC 512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
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MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111M 8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE 512K X 16 OTPROM, 90 ns, PDIP42
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CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM(36-Mb (1M x 36/2M x 18/512K x 72)管道式同步SRAM)
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